Pii: S0026-2692(98)00111-6
نویسندگان
چکیده
The drive performance of a new MOSFET structure, the peak device, resulting from recent doping profile optimizations of a 0.25 mm nMOSFET for 1.5 V supply voltage, is investigated. Explanations for the improved performance are given using two-dimensional device simulation. With an analytical transistor model fitted to the two-dimensional device characteristics, the relevant physical effects are identified. It is shown that the superior drive performance of the peak device can mainly be addressed to the reduction of the effective gate length and the improved bulk effect. q 1999 Elsevier Science Ltd. All rights reserved.
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